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| TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT (64M x 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION ) The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages). The TC58NS512A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed. The TC58NS512DC is a SmartMediaTM with ID and each device has 128 bit unique ID number embedded in the device. This unique ID number is applicable to image files, music files, electronic books, and so on where copyright protection is required. The data stored in the TC58NS512ADC needs to comply with the data format standardized by the SSFDC Forum in order to maintain compatibility with other SmartMediaTM systems. FEATURES * Organization Memory cell allay 528 x 128K x 8 Register 528 x 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum * * * * Power supply VCC = 3.3 V 0.3 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 s max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 A max. Package FDC-22A (Weight: 1.8 g typ.) * * * * PIN ASSIGNMENT (TOP VIEW) VSS CLE ALE PIN NAMES I/O1 to I/O8 CE WE RE CLE ALE WP WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Ground input Low Voltage Detect Power supply Ground TM 1 2 3 4 5 6 7 8 9 10 11 RY/BY GND LVD 22 21 20 19 18 17 16 15 14 13 12 VCC VSS VCC CE RE RY/BY GND LVD I/O8 I/O7 I/O6 I/O5 VCC is a trademark of Toshiba Corporation. 1 2004-03-12 TC58NS512ADC BLOCK DIAGRAM VCC VSS Status register I/O1 to I/O8 I/O Control circuit Address register Column buffer Column decoder Command register Data register Sense amp CLE ALE Logic control WE RE Control Row address decoder CE Row address buffer decoder Memory cell array WP RY/BY RY/BY HV generator ABSOLUTE MAXIMUM RATINGS SYMBOL VCC VIN VI/O PD Tstg Topr Power Supply Voltage Input Voltage Input/Output Voltage Power Dissipation Storage Temperature Operating Temperature RATING VALUE UNIT V V V W C C -0.6 to 4.6 -0.6 to 4.6 -0.6 V to VCC + 0.3 V ( 4.6 V) 0.3 -20 to 65 0 to 55 CAPACITANCE *(Ta = 25C, f = 1 MHz) SYMB0L CIN COUT Input Output PARAMETER CONDITION VIN = 0 V VOUT = 0 V MIN MAX 10 12 UNIT pF pF * This parameter is periodically sampled and is not tested for every device. 2 2004-03-12 TC58NS512ADC VALID BLOCKS (1) SYMBOL NVB PARAMETER Number of Valid Blocks MIN 4016 TYP. MAX 4096 UNIT Blocks (1) The TC58NS512A occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document. RECOMMENDED DC OPERATING CONDITIONS SYMBOL VCC VIH VIL PARAMETER Power Supply Voltage High Level input Voltage Low Level Input Voltage MIN 3.0 2.0 TYP. 3.3 MAX 3.6 VCC + 0.3 0.8 UNIT V V V -0.3* * -2 V (pulse width lower than 20 ns) DC CHARACTERISTICS (Ta = 0 to 55C, VCC = 3.3 V 0.3 V) SYMBOL IIL ILO ICCO1 PARAMETER Input Leakage Current Output Leakage Current Operating Current (Serial Read) Operating Current (Command Input) Operating Current (Data Input) Operating Current (Address Input) Programming Current Erasing Current Standby Current Standby Current High Level Output Voltage Low Level Output Voltage Output Current of RY/BY pin CONDITION VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 50 ns tcycle = 50 ns tcycle = 50 ns tcycle = 50 ns MIN TYP. MAX UNIT 2.4 10 10 10 30 A A mA ICCO3 ICCO4 ICCO5 ICCO7 ICCO8 ICCS1 ICCS2 VOH VOL IOL ( RY/BY ) 10 10 10 10 10 30 30 30 30 30 1 50 mA mA mA mA mA mA CE = VIH, WP = 0V/VCC CE = VCC - 0.2 V, WP = 0V/VCC IOH = -400 A IOL = 2.1 mA VOL = 0.4 V 10 A V V mA 8 0.4 3 2004-03-12 TC58NS512ADC AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 55C, VCC = 3.3 V 0.3 V) SYMBOL tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH CLE Setup Time CLE Hold Time CE Setup Time CE Hold Time Write Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time PARAMETER MIN 0 10 0 10 25 0 10 20 10 50 MAX UNIT ns ns ns ns ns ns ns ns ns ns NOTES WE High Hold Time 15 100 20 35 50 ns ns ns ns ns ns tWW tRR tRP tRC tREA tCEA WP High to WE Low Ready to RE Falling Edge Read Pulse Width Read Cycle Time RE Access Time (Serial Data Access) 35 CE Access Time (Serial Data Access, ID Read) ALE Access Time (ID Read) CE High Time for Last Address in Serial Read Cycle 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns s tALEA tCEH tREAID tOH tRHZ tCHZ tREH tIR tRSTO tCSTO tRHW tWHC tWHR tR tWB tAR2 tRB tCRY tRST 100 (2) RE Access Time (ID Read) Data Output Hold Time 35 10 RE High to Output High Impedance CE High to Output High Impedance RE High Hold Time Output-High-impedance-to- RE Falling Edge RE Access Time (Status Read) CE Access Time (Status Read) 30 20 15 0 35 45 RE High to WE Low WE High to CE Low WE High to RE Low Memory Cell Array to Starting Address WE High to Busy ALE Low to RE Low (Read Cycle) RE Last Clock Rising Edge to Busy (in Sequential Read) CE High to Ready (When interrupted by CE in Read Mode) Device Reset Time (Read/Program/Erase) 0 30 30 25 200 ns ns ns s s 50 200 1+ tr ( RY/BY ) 6/10/500 (1) (2) AC TEST CONDITIONS PARAMETER Input level Input pulse rise and fall time Input comparison level Output data comparison level Output load CONDITION 2.4 V, 0.4 V 3 ns 1.5 V, 1.5 V 1.5 V, 1.5 V CL (100 pF) + 1 TTL 4 2004-03-12 TC58NS512ADC Note: (1) CE High to Ready time depends on the pull-up resistor tied to the RY/ BY pin. (Refer to Application Note (9) toward the end of this document.) (2) Sequential Read is terminated when tCEH is greater than or equal to 100 ns. If the RE to CE delay is less than 30 ns, RY/ BY signal stays Ready. tCEH 100 ns * CE *: VIH or VIL RE 525 526 527 A A : 0 to 30 ns Busy signal is not output. RY/BY Busy tCRY PROGRAMMING AND ERASING CHARACTERISTICS (Ta = 0 to 55C, VCC = 3.3 V 0.3 V) SYMBOL tPROG tDBSY tMBPBSY N tBERASE PARAMETER Programming Time Dummy Busy Time for Multi Block Programming Multi Block Program Busy Time Number of Programming Cycles on Same Page Block Erasing Time MIN TYP. 200 2 200 MAX 1000 10 1000 3 10 ms UNIT NOTES s s s (1) 2 (1): Refer to Application Note (12) toward the end of this document. 5 2004-03-12 TC58NS512ADC TIMING DIAGRAMS Latch Timing Diagram for Command/Address/Data CLE ALE CE RE Setup Time Hold Time WE tDS I/O1 to tDH : VIH or VIL Command Input Cycle Timing Diagram CLE tCLS tCS tCLH tCH CE tWP WE tALS tALH ALE tDS I/O1 to tDH : VIH or VIL 6 2004-03-12 TC58NS512ADC Address Input Cycle Timing Diagram tCLS CLE tCS tWC tWC TWC CE tWP tWH tWP tWH tWP tWH tWP WE tALS tALH ALE tDS I/O1 to tDH tDS tDH tDS tDH tDS tDH A0 to A7 A9 to A16 A17 to A24 A25 : VIH or VIL Data Input Cycle Timing Diagram tCLH CLE tCS tCH CE tALS tWC ALE tWP tWH tWP tWP WE tDS I/O1 to tDH tDS tDH tDS tDH DIN0 DIN1 DIN527 : VIH or VIL 7 2004-03-12 TC58NS512ADC Serial Read Cycle Timing Diagram tRC CE tRP tREH tRP tRP tCHZ RE tREA I/O1 to tRR tOH tRHZ tREA tOH tRHZ tREA tOH tRHZ RY/BY Status Read Cycle Timing Diagram tCLS CLE tCLS tCS tCLH CE tWP tCH WE tWHC tWHR tCSTO tCHZ RE tDS I/O1 to tDH tIR tRSTO tOH tRHZ 70H* Status output RY/BY * 70H represents the hexadecimal number : VIH or VIL 8 2004-03-12 TC58NS512ADC Read Cycle (1) Timing Diagram CLE tCLS tCS tCLH tCH tCEH CE tWC tCRY WE tALS tALH ALE tR tWB tDS tDH I/O1 to tDS tDH tDS tDH A9 to A16 Column address N* RY/BY : VIH or VIL tDS tDH A17 to A24 tDS tDH tREA DOUT N DOUT N+1 DOUT N+2 DOUT 527 tRB tRR tRC tALH tAR2 RE 00H A25 Read Cycle (1) Timing Diagram: When Interrupted by CE CLE tCLS tCS tCLH tCH CE tWC tCHZ WE tALS tALH ALE tR tWB tDH I/O1 to tDS tDH A0 to A7 tDS tDH A9 to A16 tDS tDH A17 to A24 tDS tDH tREA DOUT N DOUT N+1 DOUT N+2 tRR tRC tALH tAR2 RE tRHZ tOH 00H A25 Column address N* RY/BY *: Read operation using 00H command N: 0 to 255 : VIH or VIL 9 2004-03-12 TC58NS512ADC Read Cycle (2) Timing Diagram CLE tCLS tCS tCLH tCH CE WE tALH tALS tALH tAR2 ALE tR tWB tDS tDH I/O1 to tDS tDH A9 to A16 A17 to A24 tREA tRR tRC RE 01H A0 to A7 A25 DOUT DOUT DOUT 527 Column address N* RY/BY 256 + N 256 + N + 1 *: Read operation using 01H command N: 0 to 255 : VIH or VIL Read Cycle (3) Timing Diagram CLE tCLS tCS tCLH tCH CE WE tALH tALS tALH tAR2 ALE tR tWB tDS tDH I/O1 to tDS tDH A9 to A16 A17 to A24 tREA tRR tRC RE 50H A0 to A7 A25 DOUT DOUT DOUT 527 Column address N* RY/BY 512 + N 512 + N + 1 *: Read operation using 50H command N: 0 to 15 : VIH or VIL 10 2004-03-12 TC58NS512ADC Sequential Read (1) Timing Diagram CLE CE WE ALE RE I/O1 to 00H A0 A9 A17 to to to A25 A7 A16 A24 Column Page address address N M N tR N+1 N+2 527 tR 0 1 2 527 RY/BY Page M access Page M + 1 access : VIH or VIL Sequential Read (2) Timing Diagram CLE CE WE ALE RE I/O1 to 01H A0 A9 A17 to to to A25 A7 A16 A24 Column Page address address N M 527 tR 256 + 256 + 256 + N N+1 N+2 tR 0 1 2 527 RY/BY Page M access Page M + 1 access : VIH or VIL 11 2004-03-12 TC58NS512ADC Sequential Read (3) Timing Diagram CLE CE WE ALE RE I/O1 to 50H A9 A17 A0 to to A25 to A7 A16 A24 Page Column address address M N 527 tR 512 + 512 + 512 + N N+1 N+2 tR 512 513 514 527 RY/BY Page M access Page M + 1 access : VIH or VIL 12 2004-03-12 TC58NS512ADC Auto-Program Operation Timing Diagram tCLS CLE tCLS tCLH tCS CE tCS WE tCH tALH tALS tALH tALS tPROG tWB ALE RE tDS tDH I/O1 to 80H tDS tDH A0 to A7 A9 A17 to A16 to A24 A25 tDS tDH DIN0 DIN1 DIN 527 10H tDS tDH 70H Status output RY/BY : VIH or VIL : Do not input data while data is being output. Auto Block Erase Timing Diagram CLE tCLS tCLH tCS tCLS CE WE tALS ALE tALH tWB tBERASE RE tDS tDH I/O1 to 60H A9 A17 to A16 to A24 A25 D0H 70H Status output RY/BY Auto Block Erase Setup command Erase Start command : VIH or VIL Busy Status Read command : Do not input data while data is being output. 13 2004-03-12 TC58NS512ADC Multi Block Programming Timing (to be continued) tCLS CLE tCLS tCLH tCS CE tCS WE tCH tALH tALS tALH tDBSY tALS tWB ALE RE tDS tDH I/O1 to /O8 80H tDS tDH A17 A9 A0 to A7 to A16 to A24 A25 tDS tDH DIN0 DIN1 DIN527 11H 80H A0 to A7 RY / BY : VIH or VIL Auto program (dummy) Max 3 times repeat 1 31 times repeat (Page 0 to 30 programming in multi block) 2 Last district input Max 4 blocks programming 14 2004-03-12 TC58NS512ADC (continuation 1) Multi Block Programming Timing tCLS CLE tCLS tCLH tCS CE tCH WE tALH tALS tALH tMBPBSY tALS tWB ALE RE tDS tDH I/O1 to 80H tDS tDH A17 A9 A0 to A7 to A16 to A24 A25 tDS tDH DIN0 DIN1 DIN527 15H 80H A0 to A7 RY / BY : VIH or VIL Max 3 times repeat 2 31 times repeat (Page 0 to 30 programming in multi block) : Do not input data while data is being output. Last district input 3 Max 3 times repeat Auto program (multi block program) Max 4 blocks programming 15 2004-03-12 TC58NS512ADC (continuation 2) Multi Block Programming Timing tCLS CLE tCLS tCLH tCS CE tCS WE tCH tALH tALS tALH tDBSY tALS tWB ALE RE tDS tDH I/O1 to I/O8 80H tDS tDH A17 A9 A0 to A7 to A16 to A24 A25 tDS tDH DIN0 DIN1 DIN527 11H 80H A0 to A7 RY / BY : VIH or VIL : Do not input data while data is being output. Auto program (dummy) 3 Max 3 times repeat (Last pages programming in multi block) 4 Last district input Max 4 blocks programming 16 2004-03-12 TC58NS512ADC (continuation 3) Multi Block Programming Timing tCLS CLE tCLS tCLH tCS CE tCH WE tALH tALS tALH tPROG tALS tWB ALE RE tDS tDH I/O1 to I/O8 80H tDS tDH A17 A9 A0 to A7 to A16 to A24 A25 tDS tDH DIN0 DIN1 DIN527 10H tDS tDH 71H Status output RY / BY : VIH or VIL : Do not input data while data is being output. Auto program (true) Max 3 4 times repeat 5 Last district input (Last pages programming in multi block) Max 4 blocks programming Status read 17 2004-03-12 TC58NS512ADC Multi Block Erase Timing Diagram CLE tCLS tCLH tCS tCLS CE WE tALS ALE tALH tWB tBERASE RE tDS tDH I/O1 to 60H A9 to A16 A17 to A24 A25 D0H 71H Status output RY/BY Auto Block Erase Setup command Erase Start command Busy Status Read command Max 4 times repeat : VIH or VIL : Do not input data while data is being output. 18 2004-03-12 TC58NS512ADC ID Read (1) Operation Timing Diagram CLE tCLS tCLS tCS tCH tCS CE tCH WE tALH tALS tALH tCEA tALEA ALE RE tDS tDH I/O1 to I/O8 tREAID tREAID tREAID tREAID 90H 00 98H 76H A5H C0H Address input Maker code Device code Option code (1) Option code (2) : VIH or VIL ID Read (2) Operation Timing Diagram CLE tCLS tCLS tCS tCH tCS CE tCH WE tALH tALS tALH tCEA tALEA ALE RE tDS tDH I/O1 to tREAID 00 20H 91H Address input : VIH or VIL 19 2004-03-12 TC58NS512ADC PIN FUNCTIONS The device is a serial access memory which utilizes time-sharing input of address information. The device pin-outs are configured as shown in Figure 1. Command Latch Enable: CLE The CLE input signal is used to control loading of the operation mode command into the internal command register. The command is latched into the command register from the I/O port on the rising edge of the WE signal while CLE is High. 1 2 3 4 5 6 7 8 9 10 11 VSS CLE ALE WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS Address Latch Enable: ALE The ALE signal is used to control loading of either address information or input data into the internal address/data register. Address information is latched on the rising edge of WE if ALE is High. Input data is latched if ALE is Low. 22 21 20 19 18 17 16 15 14 13 12 Chip Enable: CE VCC CE RE RY/BY GND LVD I/O8 I/O7 I/O6 I/O5 VCC The device goes into a low-power Standby mode when CE goes High during a Read operation. The CE signal is ignored when device is in Busy state ( RY/ BY = L), such as during a Program or Erase operation, and will not enter Standby mode even if the CE input goes High. The CE signal must stay Low during the Read mode Busy state to ensure that memory array data is correctly transferred to the data register. Figure 1. Pinout Write Enable: WE The WE signal is used to control the acquisition of data from the I/O port. Read Enable: RE The RE signal controls serial data output. Data is available tREA after the falling edge of RE . The internal column address counter is also incremented (Address = Address + l) on this falling edge. I/O Port: I/O1 to 8 The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from the device. Write Protect: WP The WP signal is used to protect the device from accidental programming or erasing. The internal voltage regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off sequence when input signals are invalid. Ready/Busy: RY/BY The RY/ BY output signal is used to indicate the operating condition of the device. The RY/ BY signal is in Busy state ( RY/ BY = L) during the Program, Erase and Read operations and will return to Ready state ( RY/ BY = H) after completion of the operation. The output buffer for this signal is an open drain. Low Voltage Detect: LVD The LVD signal is used to detect the power supply voltage level. 20 2004-03-12 TC58NS512ADC Schematic Cell Layout and Address Assignment The Program operation works on page units while the Erase operation works on block units. I/O1 512 16 I/O8 32 pages A page consists of 528 bytes in which 512 bytes are used for main memory storage and 16 bytes are for redundancy or for other uses. 1 page = 528 bytes 1 block = 528 bytes x 32 pages = (16K + 512) bytes Capacity = 528 bytes x 32 pages x 4096 blocks An address is read in via the I/O port over four consecutive clock cycles, as shown in Table 1. = 131072 pages 4096 blocks 1 block Table 1. Addressing I/O8 First cycle Second cycle Third cycle Fourth cycle A7 A16 A24 I/O7 A6 A15 A23 I/O6 A5 A14 A22 I/O5 A4 A13 A21 I/O4 A3 A12 A20 I/O3 A2 A11 A19 I/O2 A1 A10 A18 I/O1 A0 A9 A17 A25 A0 to A7 : Column address A9 to A25 : Page address A14 to A25 : Block address A9 to A13 : NAND address in block * : A8 is automatically set to Low or High by a 00H command or a 01H command. * : l/O2 to l/O8 must be set to Low in the fourth cycle. Operation Mode: Logic and Command Tables The operation modes such as Program, Erase, Read and Reset are controlled by the fourteen different command operations shown in Table 3. Address input, command input and data input/output are controlled by the CLE, ALE, CE , WE , RE and WP signals, as shown in Table 2. Table 2. Logic Table CLE Command Input Data Input Address Input Serial Data Output During Programming (Busy) During Erasing (Busy) Program, Erase Inhibit Standby H: VIH, L: VIL, *: VIH or VIL H L L L ALE L L H L CE L L L L H WE RE H H H WP *1 *1 : Refer to Application Note (10) toward the end of this document. = 8I/O 528 Figure 2. Schematic Cell Layout *L *L *L *L *L *L *L * H * * * * * * * * * * * * * H * * * * * * * * H H L 0V/Vcc 21 2004-03-12 TC58NS512ADC Table 3. Command table (HEX) First Cycle Serial Data Input Read Mode (1) Read Mode (2) Read Mode (3) Reset Auto Program (True) Auto Program (Dummy) Auto Program (Multi Block Program) Auto Block Erase Status Read (1) Status Read (2) ID Read (1) ID Read (2) 80 00 01 50 FF 10 11 15 60 70 71 90 91 Second Cycle Acceptable while Busy D0 HEX data bit assignment (Example) Serial Data Input: 80H 1 0 0 6 0 5 0 4 0 3 0 0 I/O8 7 2 I/O1 Once the device has been set to Read mode by a 00H, 01H or 50H command, additional Read commands are not needed for sequential page Read operations. Table 4 shows the operation states for Read mode. Table 4. Read mode operation states CLE Output Select Output Deselect Standby H: VIH, L: VIL, *: VIH or VIL L L L ALE L L L CE L L H WE H H H RE L H I/O1 to I/O8 Output High impedance High impedance Power Active Active Standby * 22 2004-03-12 TC58NS512ADC DEVICE OPERATION Read Mode (1) Read mode (1) is set when a "00H" command is issued to the Command register. Refer to Figure 3 below for timing details and the block diagram. CLE CE WE ALE RE RY/BY M I/O 00H Start-address input Busy N M 527 Select page N Figure 3. Read mode (1) operation Cell array A data transfer operation from the cell array to the register starts on the rising edge of WE in the fourth cycle (after the address information has been latched). The device will be in Busy state during this transfer period. The CE signal must stay Low after the fourth address input and during Busy state. After the transfer period the device returns to Ready state. Serial data can be output synchronously with the RE clock from the start pointer designated in the address input cycle. Read Mode (2) CLE CE WE ALE RE RY/BY M I/O 01H Start-address input 256 M Busy N 527 Select page N Figure 4. Read mode (2) operation Cell array The operation of the device after input of the 01H command is the same as that of Read mode (1). If the start pointer is to be set after column address 256, use Read mode (2). However, for a Sequential Read, output of the next page starts from column address 0. 23 2004-03-12 TC58NS512ADC Read Mode (3) Read mode (3) has the same timing as Read modes (1) and (2) but is used to access information in the extra 16-byte redundancy area of the page. The start pointer is therefore set to a value between byte 512 and byte 527. CLE CE WE ALE RE RY/BY I/O 50H A0 to A3 Addresses bits A0 to A3 are used to set the start pointer for the redundant memory cells, while A4 to A7 are ignored. Once a "50H" command has been issued, the pointer moves to the redundant cell locations and only those 16 cells can be addressed, regardless of the value of the A4-to-A7 address. (A "00H" command is necessary to move the pointer back to the 0-to-511 main memory cell location.) Busy 512 527 Figure 5. Read mode (3) operation Sequential Read (1) (2) (3) This mode allows the sequential reading of pages without additional address input. 00H 01H 50H RY/BY Busy (00H) 0 527 (01H) 256 Busy 527 (50H) Busy 512 527 A A A Address input tR Data output tR Data output tR Sequential Read (1) Sequential Read (2) Sequential Read (3) Sequential Read modes (1) and (2) output the contents of addresses 0 to 527 as shown above, while Sequential Read mode (3) outputs the contents of the redundant address locations only. When the page address reaches the next block address, read command (00H/01H/50H) and address inputs are needed. 24 2004-03-12 TC58NS512ADC Status Read The device has three Status Read commands. There are Status Read (1) command "70H" and Status Read (2) command "71H". The device automatically implements the execution and verification of the Program and Erase operations. The Status Read function is used to monitor the Ready/Busy status of the device, determine the result (pass/fail) of a Program or Erase operation, and determine whether the device is in Protect mode. The device status is output via the I/O port on the RE clock after a Status Read command "70H" or "71H" input. The resulting information of Status Read (1) command "70H" is outlined in Table 5 below and the resulting information of Status Read (2) command "71H" are outlined in the explanation for Multi Block Program and Multi Block Erase toward the end of this document. Table 5. Status output table for Status Read (1) command "70H" STATUS I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 Pass/Fail Not Used Not Used Not Used Not Used Not Used Ready/Busy Write Protect Pass: 0 0 0 0 0 0 Ready: 1 Protect: 0 Busy: 0 Not Protected: 1 The Pass/Fail status on I/O1 is only valid when the device is in the Ready state. OUTPUT Fail: 1 An application example with multiple devices is shown in Figure 6. CE1 CE2 CE3 CEN CEN + 1 CLE ALE WE RE I/O1 to I/O8 RY/BY Device 1 Device 2 Device 3 Device N Device N+1 RY/BY CLE ALE WE CE1 CEN Busy RE I/O 70H 70H Status on Device 1 Status on Device N Figure 6. Status Read timing application example System Design Note: If the RY/ BY pin signals from multiple devices are wired together as shown in the diagram, the Status Read function can be used to determine the status of each individual device. 25 2004-03-12 TC58NS512ADC Auto Page Program The device carries out an Automatic Page Program operation when it receives a "10H" Program command after the address and data have been input. The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.) Pass 80 10 70 Status Read command I/O Data input Address Data input Program command input 0 to 527 command Fail RY/BY Data input Program Selected page Reading & verification RY/BY automatically returns to Ready after completion of the operation. Figure 7. Auto Page Program operation The data is transferred (programmed) from the register to the selected page on the rising edge of WE following input of the "10H" command. After programming, the programmed data is transferred back to the register to be automatically verified by the device. If the programming does not succeed, the Program/Verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. Auto Block Erase The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command "D0H" which follows the Erase Setup command "80H". This two-cycle process for Erase operations acts as an ertra layer of protection from aceidental erasure of data due to external noise. The device automatically executes the Erase and Verify operations. Pass 60 D0 Block Address Erase Start input: 3 cycles command 70 Status Read command Busy I/O Fail RY/BY 26 2004-03-12 TC58NS512ADC Multi Block Program The device carries out an Multi Block Program operation when it receives a "15H" or "10H" Program command after some sets of the address and data have been input. In the interval of the Multi District adress and the (512 + 16 byte) data input, "11H" Dummy Program command is used when it still continues the data input into another District. The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.) Data input command 80 Address input RY / BY Dummy Program command 11 Data input 0 to 527 Data input command 80 Dummy Program command 11 Data input command 80 Address input Dummy Program command 11 Data input 0 to 527 Data input command 80 Multi block Program command 15 Address Data input 0 to 527 input Address Data input input 0 to 527 80 Data input 11 80 11 80 11 80 15 (District 0) (District 1) (District 2) (District 3) After "15H" Multi Block Program command, physical programing starts as follows. Program Selected page Reading & verification The data is transferred (programmed) from the register to the selected page on the rising edge of -WE following input of the "15H" command. After programming, the programmed data is transferred back to the register to be automatically verified by the device. If the programming does not succeed, the Program/Verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. 27 2004-03-12 TC58NS512ADC Starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total 31 times with incrementing the page address in the blocks, and then input the last page data of the blocks, "10H" command executes final programming. In this full sequence, the command sequence is following. 1st 80 80 11 11 80 80 11 11 80 80 11 11 80 80 15 15 31st 32nd 80 80 11 11 80 80 11 11 80 80 11 11 80 80 15 10 After the "10H" command, the total results of the above operation is shown through the Status Read command. Pass 10 71 Status Read command I/O Fail RY/BY The Status discription of 71H command is following. STATUS I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 Total Pass/Fail District 0 District 1 District 2 District 3 Pass/Fail Pass/Fail Pass/Fail Pass/Fail Pass: 0 Pass: 0 Pass: 0 Pass: 0 Pass: 0 Do not care Ready: 1 Protect: 0 OUTPUT Fail: 1 Fail: 1 Fail: 1 Fail: 1 Fail: 1 I/O2 describes Pass/Fail condition. If more than one fail occurred in 32 times (512 + 16 byte) page write operation in District 0 area, it shows "Fail" condition. I/O3, I/O4 and I/O5 are as same manner as I/O2. I/O1 describes total Pass/Fail condition. If at least one fail occurred in 32 times x 4 (512 + 16 byte) page write operation, it shows "Fail" condition. Not Used Ready/Busy Write Protect Busy: 0 Not Protect: 1 28 2004-03-12 TC58NS512ADC Internal addressing in relation with the Districts To use Multi Block Program operation, the internal addressing should be conscious in relation with the District. * The device consists of 4 Districts. * Each District consists from 1024 erase blocks. * The allocation rule is follows. District 0: Block 0, Block 4, Block 8, Block 12, ***.., Block 4092 District 1: Block 1, Block 5, Block 9, Block 13, ***.., Block 4093 District 2: Block 2, Block 6, Block 10, Block 14, ***.., Block 4094 District 3: Block 3, Block 7, Block 11, Block 15, ***.., Block 4095 Address input restriction for the Multi Block Program operation In selecting the blocks for the Multi Block Program operation, following is the restriction and acceptance. (Restriction) Maximum one block should be selected from each District. The data input operation should be started from the same number page of the each selected block and then, the page number in the blocks should be same number at the same time programming. (Acceptance) There is no order limitation of the District for the address input. Any number of the District can be select for the programming. So, for example, following operations are in acceptance. Example 1 : (80) [District 2] (11) (80) [District 0] (11) (80) [District 1] (15) Example 2 : (80) [District 0] (11) (80) [District 1] (11) (80) [District 2] (11) (80) [District 3] (15) It requires no mutual address relation between the selected blocks from each District. Operating restriction during the Multi Block Program operation (Restriction) Starting from 1st page data input, until issuing "10H" command, any other command out of defined sequence can not be issued except Status Read command and Reset command. (Acceptance) The data input operation can be terminated with "10H" command instead of "15H" command in the middle of the page number in the block. In this case the Status represents the reflected value accumulated from 1st page programming of this sequence and up to the last page programming terminated by "10H" command. Status Read operation Untill the Ready condition after the programming terminated by "10H" command, effective bit in the Status data is limited on Ready/Busy bit. In other words, Pass/Fail condition can be checked only in the Ready condition after "10H" command. 29 2004-03-12 TC58NS512ADC Multi Block Erase The device carries out a Multi Block Erase operation when it receives a "D0H" command after some sets of the address have been input. After the "D0H" command, the total results of Erase operation is shown through the Status Read (2) command "71H". Pass D0 71 Status Read command I/O Fail RY/BY The Status discription of 71H command is following. STATUS I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 Total Pass/Fail District 0 Pass/Fail District 1 Pass/Fail District 2 Pass/Fail District 3 Pass/Fail Not Used Ready/Busy Write Protect Pass: 0 Pass: 0 Pass: 0 Pass: 0 Pass: 0 Do not care Ready: 1 Protect: 0 Busy: 0 Not Protect: 1 I/O3, I/O4 and I/O5 are as same manner as I/O2. OUTPUT Fail: 1 Fail: 1 Fail: 1 Fail: 1 Fail: 1 I/O2 describes Pass/Fail condition. If fail occurred in District 0 area, it shows "Fail" condition. I/O1 describes total Pass/Fail condition. If at least one fail occurred in Max 4 Blocks erase operation, it shows "Fail" condition. Internal addressing in relation with the Districts * * * To use Multi Block Erase operation, the internal addressing should be conscious in relation with the Districts. The device consists of 4 Districts. Each District consists from 1024 erase blocks. The allocation rule is follows. District 0: Block 0, Block 4, Block 8, Block 12, ***.., Block 4092 District 1: Block 1, Block 5, Block 9, Block 13, ***.., Block 4093 District 2: Block 2, Block 6, Block 10, Block 14, ***.., Block 4094 District 3: Block 3, Block 7, Block 11, Block 15, ***.., Block 4095 Address input restriction for the Multi Block Erase operation In selecting the blocks for the Multi Block Erase operation, following is the restriction and acceptance. (Restriction) Maximum one block should be selected from each District. (Acceptance) There is no order limitation of the District for the address input. Any number of the Districts can be select for the erase operation. So, for example, following operation are in acceptance. Example 1 : (60) [District 2] (60) [District 0] (60) [District 1] (D0) Example 2 : (60) [District 0] (60) [District 1] (60) [District 2] (60) [District 3] (D0) It requires no mutual address relation between the selected blocks from each District. 30 2004-03-12 TC58NS512ADC Reset The Reset mode stops all operations. For example, in the case of a Program or Erase operation the internally generated voltage is discharged to 0 volts and the device enters Wait state. The response to an "FFH" Reset command input during the various device operations is as follows: When a Reset (FFH) command is input during programming Figure 8. 80 10 FF 00 Internal VPP RY/BY tRST (max 10 s) When a Reset (FFH) command is input during erasing Figure 9. D0 Internal erase voltage RY/BY tRST (max 500 s) FF 00 When a Reset (FFH) command is input during Read operation Figure 10. 00 FF 00 RY/BY tRST (max 6 s) When a Status Read command (70H) is input after a Reset Figure 11. FF 70 I/O status: Pass/Fail Pass Ready/Busy Ready RY/BY FF 70 I/O status: Ready/Busy Busy RY/BY When two or more Reset commands are input in succession Figure 12. (1) FF (2) FF (3) FF RY/BY The second FF FF command is invalid, but the third command is 31 2004-03-12 TC58NS512ADC ID Read (1) The device contains ID codes which identify the device type and the manufacturer. The device has 2 types of ID read command, i.e. ID Read (1) command 90H and ID Read (2) command 91H. ID Read (1) command 90H provides maker code and device code. The ID codes can be read out under the following timing conditions: CLE tCEA CE WE tALEA ALE RE tREAID I/O 90H ID Read command (1) 00 Address 00 98H Maker code 76H Device code A5H Option code (1) C0H Option code (2) For the specifications of the access times tREAID, tCR and tAR1 refer to the AC Characteristics. Figure 13. ID Read timing Table 6. ID Codes read out by ID read command (1) 90H I/O8 Maker code Device code Option code (1) Option code (2) rd I/O7 0 1 0 1 I/O6 0 1 1 0 I/O5 1 1 0 0 I/O4 1 0 0 0 I/O3 0 1 1 0 I/O2 0 1 0 0 I/O1 0 0 1 0 Hex Data 98H 76H A5H* C0H** 1 0 1 1 * The A5H for the 3 byte of ID read means the existence of 128 bit unique ID number in the device. th ** The C0H for the 4 byte of ID read means the existence of ID Read (2) function. How to read out unique ID number The 128 bit unique ID number is embedded in the device. The procedure to read out the ID number is available using special command which is provided under a non-disclosure agreement. 32 2004-03-12 TC58NS512ADC ID Read (2) ID Read (2) command 91H provides x4-block mode availability. If ID code read out by 91H is 20H, it indicates the device has x4-block mode. CLE tCEA CE WE tALEA ALE RE tREAID I/O 91H ID Read command (2) 00 Address 00 20H Extended ID code For the specifications of the access times tREAID, tCEA and tALEA refer to the AC Characteristics. Figure 14. ID Read timing Table 7. ID Codes read out by command 91H I/O8 Extended ID code 0 I/O7 0 I/O6 1 I/O5 0 I/O4 0 I/O3 0 I/O2 0 I/O1 0 Hex Data 20H 33 2004-03-12 TC58NS512ADC APPLICATION NOTES AND COMMENTS (1) Power-on/off sequence: The WP signal is useful for protecting against data corruption at power-on/off. The following timing sequence is necessary. The WP signal may be negated any time after the VCC reaches 2.5 V and CE signal is kept high in power up sequence. 3.0 V 2.8 V 0V VCC Don't care CE , WE , RE CLE, ALE VIL Operation Figure 15. Power-on/off Sequence VIH VIL Don't care WP In order to operate this device stably, after VCC becomes 2.8 V, it recommends starting access after about 200 s. (2) Status after power-on The following sequence is necessary because some input signals may not be stable at power-on. Power on FF Reset Figure (3) Prohibition of unspecified commands The operation commands are listed in Table 3. Input of a command other than those specified in Table 3 is prohibited. Stored data may be corrupted if an unknown command is entered during the command cycle. (4) Restriction of command while Busy state During Busy state, do not input any command except 70H, 71H and FFH. (5) Acceptable commands after Serial Input command "80H" Once the Serial Input command "80H" has been input, do not input any command other than the Program Execution command "10H", "11H" or "15H" or the Reset command "FFH". If a command other than "10H", "11H", "15H" or "FFH" is input, the Program operation is not performed. 80 XX 10 For this operation the "FFH" command is Command other than "10H", "11H", "15H" or Programming cannot be 34 2004-03-12 TC58NS512ADC (6) Addressing for program operation Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) page of the block. Random page address programming is prohibited. From the LSB page to MSB page DATA IN: Data (1) Data (32) Data register Page 0 Page 1 Page 2 (1) (2) (3) Page 0 Page 1 Page 2 Ex.) Random page program (Prohibition) DATA IN: Data (1) Data (32) Data register (2) (16) (3) Page 15 (16) Page 15 (1) Page 31 (32) Page 31 Figure 17. page programming within a block (32) (7) Status Read during a Read operation 00 command CE WE RY/BY RE Address N 00 70 [A] Status Read command input Figure 18. Status Read Status output The device status can be read out by inputting the Status Read command "70H" in Read mode. Once the device has been set to Status Read mode by a "70H" command, the device will not return to Read mode. Therefore, a Status Read during a Read operation is prohibited. However, when the Read command "00H" is input during [A], Status mode is reset and the device returns to Read mode. In this case, data output starts automatically from address N and address input is unnecessary 35 2004-03-12 TC58NS512ADC (8) Pointer control for "00H", "01H" and "50H" The device has three Read modes which set the destination of the pointer. Table 7 shows the destination of the pointer, and Figure 14 is a block diagram of their operations. Table 8. Pointer Destination Read Mode (1) (2) (3) Command 00H 01H 50H Pointer 0 to 255 256 to 511 512 to 527 (1) 00H (2) 01H (3) 50H 0 A 255 256 B 511 512 527 C Pointer control Figure 19. Pointer control The pointer is set to region A by the "00H" command, to region B by the "01H" command, and to region C by the "50H" command. (Example) The "00H" command must be input to set the pointer back to region A when the pointer is pointing to region C. 00H Add Start point A area Add Start point A area 00H Add Start point C area Add Start point C area Add Start point A area 50H Add Start point C area 50H 01H Add Start point B area Add Start point A area To program region C only, set the start point to region C using the 50H command. 50H 80H Add DIN Start point C Area 10H Programming region C only 01H 80H Add DIN Start point B Area 10H Programming region B and C Figure 20. Example of How to Set the Pointer 36 2004-03-12 TC58NS512ADC (9) RY/ BY : termination for the Ready/Busy pin ( RY/ BY ) A pull-up resistor needs to be used for termination because the RY/ BY buffer consists of an open drain circuit. VCC Ready VCC Device CL VSS Figure 21. tr This data may vary from device to device. We recommend that you use this data as a reference when selecting a resistor value. 1.5 s 1.0 s 0.5 s 0 tr 5 ns tf R RY/BY tf tr VCC = 3.3 V Ta = 25C CL = 100 pF 3.0 V VCC 1.0 V Busy 1.0 V 3.0 V 15 ns 10 ns tf 1 K 2 K R 3 K 4 K 37 2004-03-12 TC58NS512ADC (10) Note regarding the WP signal The Erase and Program operations are automatically reset when WP goes Low. The operations are enabled and disabled as follows: Enable Programming WE DIN 80 10 WP RY/BY tWW (100 ns min) Disable Programming WE DIN 80 10 WP RY/BY tWW (100 ns min) Enable Erasing WE DIN 60 D0 WP RY/BY tWW (100 ns min) Disable Erasing WE DIN 60 D0 WP RY/BY tWW (100 ns min) 38 2004-03-12 TC58NS512ADC (11) When five address cycles are input Although the device may read in a fifth address, it is ignored inside the chip. Read operation CLE CE WE ALE I/O 00H, 01H or 50H RY/BY WE Internal read operation starts when WE goes High in the fourth cycle. Figure 22. Address input ignored Program operation CLE CE WE ALE I/O 80H Address input ignored Figure 23. Data input 39 2004-03-12 TC58NS512ADC (12) Several programming cycles on the same page (Partial Page Program) A page can be divided into up to 3 segments. Each segment can be programmed individually as follows: 1st programming Data Pattern 1 All 1s 2nd programming All 1s Data Pattern 2 All 1s 3rd programming All 1s Data Pattern 3 Result Data Pattern 1 Data Pattern 2 Data Pattern 3 Figure 24. Note: The input data for unprogrammed or previously programmed page segments must be "1" (i.e. the inputs for all page bytes outside the segment which is to be programmed should be set to all "1"). (13) Note regarding the RE signal RE The internal column address counter is incremented synchronously with the RE clock in Read mode. Therefore, once the device has been set to Read mode by a "00H", "01H" or "50H" command, the internal column address counter is incremented by the RE clock independently of the address input timing, If the RE clock input pulses start before the address input, and the pointer reaches the last column address, an internal read operation (array to register) will occur and the device will enter Busy state. (Refer to Figure 25.) Address input I/O 00H/01H/50H WE RE RY/BY Figure 25. Hence the RE clock input must start after the address input. 40 2004-03-12 TC58NS512ADC (14) Invalid blocks (bad blocks) The device contains unusable blocks. Therefore, the following issues must be recognized: Referring to the Block status area in the redundant area allows the system to detect bad blocks in the accordance with the physical data format issued by the SSFDC Forum. Detect the bad blocks by checking the Block Status Area at the system power-on, and do not access the bad blocks in the following routine. The number of valid blocks at the time of shipment is as follows: MIN Bad Block Valid (Good) Block Number 4016 TYP. MAX 4096 UNIT Block Bad Block Figure 26. (15) Failure phenomena for Program and Erase operations The device may fail during a Program or Erase operation. The following possible failure modes should be considered when implementing a highly reliable system. FAILURE MODE Block Page Erase Failure Programming Failure Programming Failure 10 DETECTION AND COUNTERMEASURE SEQUENCE Status Read after Erase Block Replacement Status Read after Program Block Replacement (1) Block Verify after Program Retry (2) ECC Single Bit * * ECC: Error Correction Code Block Replacement Program Error occurs Buffer memory Block A When an error happens in Block A, try to reprogram the data into another Block (Block B) by loading from an external buffer. Then, prevent further system accesses to Block A (by creating a bad block table or by using an another appropriate scheme). Block B Figure 27. Erase When an error occurs in an Erase operation, prevent future accesses to this bad block (again by creating a table within the system or by using another appropriate scheme). (16) Chattering of Connector There may be contact chattering when the device is inserted or removed from a connector. This chattering may cause damage to the data in the device. Therefore, sufficient time must be allowed for contact bouncing to subside when a system is designed with SmartMediaTM. (17) (18) The device is formatted to comply with the Physical and Logical Data Format of the SSFDC Forum at the time of shipping. Do not turn off the power or remove the device from the socket before write/erase operation is complete. Avoid using the device when the battery is low. Power shortage, power failure and/or removal of the device from the socket before write/erase operation is complete will cause loss of data and/or damage to data. 41 2004-03-12 TC58NS512ADC Handling Precaution (1) (2) (3) Avoid bending or subjecting the card to sudden impact. Avoid touching the connectors so as to avoid damage from static electricity. This card should be kept in the antistatic film case when not in use. Toshiba cannot accept, and hereby disclaims liability for, any damage to the card including data corruption that may occur because of mishandling. How to read out unique ID number The 128 bit unique ID number is embedded in the device. The procedure to read out the ID number is available using special command which is provided under a non-disclosure agreement. SSFDC Forum The SSFDC Forum is a voluntary organization intended to promote the SmartMediaTM, a small removable NAND flash memory card. The SSFDC Forum standardized the following specifications in order to keep the compatibility of SmartMediaTM in systems. The latest specifications issued by the Forum must be referenced when a system is designed with SmartMediaTM, especially with large capacity SmartMediaTM. SmartMediaTM SmartMediaTM SmartMediaTM Electrical Specifications Physical Format Specification Logical Format Specification Some electrical specifications in this data sheet show differences from the Forum's electrical specification. Complying with the Forum's electrical specification maintains compatibility with other SmartMedias. Please refer following SSFDC Forum's URL to get the detailed information of each specification. URL http://www.ssfdc.or.jp 42 2004-03-12 TC58NS512ADC PACKAGE DIMENSIONS Weight: 1.8 g (typ.) 43 2004-03-12 TC58NS512ADC RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EBA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 44 2004-03-12 |
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